We are innovation leader in high precision measurement instruments and ATE solutions for power semiconductor devices. Our products cover all test of SiC, GaN, and Si power semiconductor devices, providing accurate, reliable, and cost-effective test system solutions for IDM enterprises, NEV manufacturers, Tier1s, and power device design and packaging enterprises.
Our test systems include dynamic wafer-level reliability test system, known good die test system, bipolar degradation test system, dynamic characteristics test system, static characteristics test system, dynamic reliability test system, car-grade continuous power test system, etc. We cover power semiconductor test from wafer level test (chip probing), chip level test (know good die), discrete/module level test (final test), and system level test (system level test), which can meet various scenario requirements in laboratories and production lines.
Completed A+ round 120 million RMB financing.
Obtained title of Shanghai "Specialized, Refined, Unique, and New" Enterprise
Financed more than 100 million RMB in total.
Obtained title of National High-Tech Enterprise.
UniSiC Suzhou is established.
Obtained title of Technological SME.
Completed A+ round 120 million RMB financing.
Obtained title of Shanghai "Specialized, Refined, Unique, and New" Enterprise
Financed more than 100 million RMB in total.
Obtained title of National High-Tech Enterprise.
UniSiC Suzhou is established.
Obtained title of Technological SME.