High Level Simulation: 100% simulation of actual working condition
Convenient: self-developed MOS crimping terminal, compatible with TO247-3&TO247-4 and no welding required
Cost-efficiency: one set of equipment can be replaced with different kits for experiment
High Reliability: working station is independent from each other with comprehensive protection
Strong adaptability: low stray inductance and strong ability with different parameters
1 main equipment plus N power cabinet units (N≤5), 2 kits per cabinet, max 10 kits
Kits: Interleaved bridgeless PFC; CLLC; BOOST; H Bridge
Innovative solid-state protective switch with a protection response time <2μs
Main testing circuit with stray inductance as low as 10nH
High-speed, high-frequency, high-reliability, and high common-mode transient immunity (CMTI) up to 200kV/μs
Cover two and three levels SiC & Si IGBT power modules
Output phase current 800Arms, output current frequency up to 1000Hz
Production line version adopts automated design, achieving automated operation such as loading, testing, blowing, and unloading
Host cabinet + N test cabinet structure
Perform continuous current test/ overcurrent test and locked rotor test through different setups
Maximum AC current: 800Arms; MaximumDC Voltage: 1500V
Stray inductance (not includes tested modules): 14±1nH(two terminal), 8±2nH(three terminal)
High stress, high reliability SiC MOSFET modules drive with gate transient withstand voltage of 100V