High Level Simulation: 100% simulation of actual working condition

Convenient: self-developed MOS crimping terminal, compatible with TO247-3&TO247-4 and no welding required

Cost-efficiency: one set of equipment can be replaced with different kits for experiment

High Reliability: working station is independent from each other with comprehensive protection

Strong adaptability: low stray inductance and strong ability with different parameters

Capacity: 1 host cabinet+N power unit cabinets with maximum of 5 power unit cabinets.Two kits per power unit cabinet,supporting up to 10 kits in a time

Kit Types:① H Bridge_5kW; ② BOOST_6.6kW;③ Non-bridge PFC_6.6kW; ④ CLLC_6.6kW

Kit Compatibility: Unique power cabinet is compatible with 4 test kits. PFC_6.6kW kit requires AC source

Innovative solid-state protective switch with a protection response time <1μs

Main testing circuit with stray inductance as low as 10-18nH

High-speed, high-frequency, high-reliability, and high common-mode transient immunity (CMTI) up to 100kV/μs

Cover two and three levels SiC & Si IGBT power modules

Output phase current 800Arms, output current frequency up to 1000Hz

Production line version adopts automated design, achieving automated operation such as loading, testing, blowing, and unloading

Single test cabinet structure, enabling parallel testing of multiple units by adding additional test cabinet

Perform continuous current test/ overcurrent test and locked rotor test through different setups

Maximum AC current: 800Arms; Maximum DC Voltage:900V

Stray inductance (not includes tested modules):18±2nH(two terminal), 10±2nH(three terminal)

High stress, high reliability SiC MOSFET modules drive with gate transient withstand voltage of 100V