KGD Test System For SiC MOSFET
Highlights SPEC
Highlights

Extremely low stray inductance to enable high quality KGD AC (Short-circuit) Test

Ultra fast protection to minimize socket and pin damages

State of the Art in-situ probe tip cleaning to assure high yield test

Hybrid handler solutions to achieve utmost UPH

DC Station

Test: V(BR)DSS,IDSS, IGSS, RG(int), VGS(th), Ciss, Coss, Crss, RDS(on), VF

Accuracy: IGS: 0.1% + 500 pA (@10nA), IDS: 0.2% ± 25mA (@500A), VGS: 0.015% + 2.4 mV (@20V ), VDS: 0.05% + 1.2V (@3500V), C: 0.05%

Performance: up to 3500V, 500A

Temperature range: RT to 200℃

AC Station (DPT + SCT)

Test: Tdon, Tdoff, Tr, Tf, Eon, Eoff, didton, didtoff, dvdton, dvdtoff, Imax, Vmax, Tsc, Esc, Psc, Isc

Typical Accuracy : IDS: 4%, VGS: 1.5%, VDS: 2%

Range : 2000V, 2000A

Temperature: RT to 200℃

UIS Station

Test: IAS, VDS*, EAS

Typical Accuracy: IDS: 2%, VGS: 1.5%, VDS: 2%

Range : 3000V, 200A, 20J

Temperature: RT ~ 200℃