Innovative stacked busbar and capacitor structure design

Main testing circuit with stray inductance as low as 6nH

High-speed, high-frequency, high-reliability, and high common-mode transient immunity (CMTI) up to 200kV/μs

High-reliability production line design with 1200 UPH for half-bridge power module

Innovative solid-state protective switch with protection response <1μs

Ability to withstand short circuit currents up to 10kA. Worry-free to explore the limits

Test items: double pulse test, short circuit test

Double pulse current level: 4000A(depending on PEM test head measured range)

Maximum test voltage:Two-level 2000V (system power support 2000V, high voltage differential probe test maximum voltage can be measured to ± 1500V) Three-level 1000V (BUS + to N.BUS- to N)

Maximum short circuit current tolerance: 10000A(Two-level)

Power module test conditions: Vdc: 50~2000V, ld: 5~4000A,Lload: 3/10/20/50/100/200uH

Drive voltage range: highest voltage+20V, lowest voltage-15V (voltage difference < 30V)

Test items: double pulse test, short circuit test

Double pulse current level: 1000A(depending on PEM test head measured range)

Maximum test voltage: 1500V

Maximum short circuit current tolerance: 3000A

Single device test conditions: Vdc: 50~1500V, ld: 5~1000A, Lload: 300uH (customized)

Drive voltage range: highest voltage+20V, lowest voltage-15V (voltage difference < 30V)

Best cost-efficiency

Stray inductance as low as 15nH

The main unit is fully compatible with different test heads, providing comprehensive testing coverage for all types of power devices

One machine covers all scenarios, from manually laboratory test to production lines

DUT types: SiC/IGBT discrete devices

Test range: double pulse test, short circuit test

Maximum voltage:1500V (system power support 2000V, high voltage differential probe test maximum voltage can be measured to ± 1500V)

Double pulse current level: 600A (depending on PEM test head measured range)

Maximum short circuit current tolerance: 3000A

Stray inductance:30±2nH (laboratory version),45±2nH (sorter versions TO247-3 and TO247-4)

DUT types: SiC MOSFET&IGBT (compatible with two level and three level power modules)

Test range:double pulse test, short circuit test

Maximum voltage:2000V(system power support 2000V, high voltage differential probe test maximum voltage can be measured to ± 1500V)

Double pulse current level: 4000A(depending on PEM test head measured range)

Maximum short circuit current tolerance: 10000A(Two-level)

Stray inductance: 15±2nH

Automated main equipment plus automated components. Support flexible line test

Two level/Three level

The production line version achieves ultra-low stray inductance: 15nH

Test items: double pulse test, short circuit test

Double pulse current level:4000A(depending on PEM test head measured range)

Maximum test voltage:2000V (system power support 2000V, high voltage differential probe test maximum voltage can be measured to ± 1500V)

Maximum test voltage: 10000A

Automation level: automated main equipment plus automated components

Can be integrated in production line

Packaging type: customized modules for different packaging

Test items:  double pulse test

Double pulse current level:1500A (depending on PEM test head measured range)

Maximum test voltage: 1000V（BUS+and N，BUS-andN）

Automation level: automated main equipment plus automated components

Can be integrated in production line

Packaging type: customized modules for different packaging