The system is capable of chip testing, including Vth testing, gate leakage current testing, drain leakage current testing, and GB/RB testing

Supports customizable experimental programs and failure determination

Equipped with automatic visual alignment and wafer ID recognition

Supports wafer MAP input and recognition

Long-term high-temperature operating capability

Applicable Wafer: Automotive SiC MOSFET wafer, compatible with 4, 6, 8 Inch

Burn-in Test: HTGB, HTRB

Temperature: RT - 200℃

Voltage Range: HTGB: up to ±75V; HTRB: up to 2000V

Test Layer:Manual version: 1；Automatic version: up to 6 layers (3+3)

Test Channels per Wafer: Up to 1300

Test Range: HTGB: IGSS (±10nA~±1A)；HTRB: IDSS (100nA~20mA)；Before & after burn-in: VGS(th) (20mV~200V)

Test Accuracy: VGS(th) : 0.015% + 1mV (@20V), IGSS: 0.060% + 100pA (@100nA), IDSS: 0.1% (@1μA)

Avoid Arcing：Sealed design, supports 0.6MPa CDA or N2

Burn-in Probe Card：Supporting Customization According to Wafer，electrical performance, structural performance to meet the test requirements